赵 瑾


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姓  名:

赵 瑾

地  址:

中国科学技术大学理化大楼11005

邮  编:

230026

电  话:

0551-63602832

电  邮:

主  页:




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 教育与科研经历

1994-1998

中国科学技术大学物理系,学士学位

1998-2003

中国科学技术大学微尺度,博士学位

2004-2008

匹兹堡大学物理系,博士后

2008-2010

匹兹堡大学物理系,研究助理教授

2010-至今

中国科学技术大学物理系、微尺度,教授


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 目前研究方向

第一性原理计算激发态动力学研究


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 代表性论文

1.

s. tan, a. argondizzo, j. ren, l. liu, j. zhao* and h. petek*, “plasmonic coupling at a metal/semiconductor interface.” nature photonics 11, 806-812 (2017)

2.

s. tan, y. dai, s. zhang, l. liu, j. zhao* and h. petek*, “coherent electron transfer at the ag/graphite heterojunction interface.” phys. rev. lett., 120, 126801 (2018)

3.

w. chu, w. a. saidi, q. zheng*,y. xie, z. lan, o. v. prezhdo, h. petek and j. zhao*, “ultrafast dynamics of photongenerated holes at a ch3oh/tio2 rutile interface.” j. am. chem. soc., 138, 13740 (2016)

4.

q. zheng, w. a. saidi, y. xie, z lan, o. v. prezhdo, h. petek and j. zhao*, “phonon-assisted ultrafast charge transfer at van der waals heterostructure interface.” nano lett. 17, 6435-6442 (2017)

5.

l. zhang, q. zheng, y. xie, z. lan, o.v. prezhdo, w. a. saidi, and j. zhao*, “delocalized impurity phonon induced electron-hole recombination in doped semiconductors.” nano lett., 18, 1592-1599 (2018)

6.

j. zhao*, m. feng, d. b. dougherty, h. sun and h. petek, “molecular electronic level alignment at weakly coupled organic film/metal interface”, acs nano, 8, 10988 (2014)

7.

d. dougherty, m. feng, h. petek, j. t. yates and j. zhao*, “band formation in a molecular quantum well via 2d superatom orbital interactions”, phys. rev. lett. 109, 266802 (2012)

8.

j. ren, y. wang, j. zhao*, s. tan, and h. petek*, “k atom promotion of o2 chemisorption on au(111) surface.” j. am. chem. soc., 141, 4438 (2019)


赵 瑾-皇冠体育平台

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